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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2527 DESCRIPTION *With TO-220C package *Complement to type 2SA1077 *Fast switching speed *Excellent safe operating area APPLICATIONS *High frequency power amplifiers *Audio power amplifiers *Switching regulators *DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 10 60 150 -65~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA ; RBE=: IC=50A ; IE=0 IE=50A ; IC=0 IC=5A; IB=0.5A IC=5 A ; VCE=5V VCB=120V ;IE=0 VCE=120V; IB=0 VEB=7V ;IC=0 IC=1 A ; VCE=5V IC=5 A ; VCE=5V IC=1 A ; VCE=10V IE=0 ; VCB=10V; f=1MHz 60 40 MIN 120 120 7 2SC2527 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE -2 fT COB TYP. MAX UNIT V V V 1.8 1.7 50 1 50 200 V V A mA A 80 180 MHz pF Switching times tr ts tf Rise time Storage time Fall time IC=7.5 A; RL=4B IB1=-IB2=0.75A 0.3 1.3 0.2 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2527 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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